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| THYRISTOR MODULE 200A / 1200 to 1600V PDT20012 PDH20012 PDT20016 PDH20016 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 OUTLINE DRAWING PDT TYPICAL APPLICATIONS * Rectified For General Use PDH Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:480g Symbol VDRM VDSM VRRM VRSM Grade PDT/PDH20012 PDT/PDH20016 Unit V V 1200 1300 1200 1300 1600 1700 1600 1700 Max Rated Value Parameter Average Rectified Output Current RMS On-State Current Surge On-State Current I Squared t Critical Rate of Turned-On Current Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm IO(AV) IT(RMS) ITSM I2t di/dt PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Conditions 50Hz Half Sine Wave condition Tc=75C 50 Hz Half Sine Wave,1Pulse Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125C IG=300mA, diG/dt=0.2A/s * Unit A A A A2s A/s 200 314 4000 80000 100 5 W 1 W 2 A 10 V 5 V -40 to +125 C -40 to +125 C Base Plate to Terminals, AC1min 2500 V M6 Screw 2.5 to 3.5 N*m M8 Screw 9.0 to 10.0 Electrical * Thermal Characteristics Characteristics Peak Off-State Current Peak Reverse Current Peak Forward Voltage Gate Current to Trigger Symbol IDM IRM VTM IGT Test Conditions VDM= VDRM, Tj= 125C VRM= VRRM, Tj= 125C ITM= 600A, Tj=25C Tj=-40C VD=6V,IT=1A Tj=25C Tj=125C Tj=-40C VD=6V,IT=1A Tj=25C Tj=125C VD=2/3VDRM Tj=125C VD=2/3VDRM Tj=125C ITM=IO,VD=2/3VDRM dv/dt=20V/s, VR=100V -di/dt=20A/s, Tj=125C VD=2/3VDRM Tj=125C IG=300mA, diG/dt=0.2A/s Maximum Value. Min. Typ. Max. 80 80 1.28 300 150 80 5 3 2 0.25 500 100 6 2 4 150 100 0.2 0.1 Unit mA mA V mA Gate Voltage to Trigger Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance Value Per 1Arm VGT VGD dv/dt tq tgt td tr IL IH Rth(j-c) V V V/s s s s s mA Tj=25C Tj=25C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound C/W PDT/PDH2001x OUTLINE DRAWING (Dimensions in mm) PDT PDH |
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